^product*, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC2073 description ? collector-emitter breakdown voltage1 :v(br)ceo= 150v(min) ? wide area of safe operation ? complement to type 2sa940 applications ? power amplifier applications. ? vertical output applications. absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ ta=25'c collector power dissipation @ tc-25'c junction temperature storage temperature range value 150 150 5 1.5 0.5 1.5 25 150 -55-150 unit v v v a a w 'c c p '? * pin \ < l.base 2. collect or 3. better to-220c package *?; u i a ? i " b 1 h -. v * l-f ?^0*0 ? ' v^x *-? ?-'? ' - vi k i h g c t" ih~l i dim a b c d r 0 h j k l q r s u u *|l mm min 15,50 9.90 4.20 0.70 3.40 4.98 2,68 0.44 1.3 ,,00 1..2q 2.70 2..30 1.29 (>.45 8.(>(> max 15.90 10,20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1..43 2.90 2.70 1,35 e.es 8.86 ? i *???" j n.i seini-coiiductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout iniiiee. in formation furnished by n.i semi-conductors is believed to he both accurate and reliable at the time of going lo press, llouever. n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i seini-c'onduciors encourages customers to \erify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC2073 electrical characteristics tc=25'c unless otherwise specified symbol vce(sat) vbe(oii) icbo iebo hfe cob fr parameter t collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc= 500ma; ib= 50ma lc= 500ma ; vce= 1 0v vcb= 120v; i e=0 veb= 5v; lc= 0 lc= 500ma ; vce= 10v le=0;vcb=10v;f,est=1mhz lc= 500ma; vce= 10v min 40 typ. 35 4 max 1.5 0.85 10 10 140 unit v v u a m a pf mhz
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